Preferential site occupation of indium in β-Ga2O3
Identifieur interne : 000417 ( Main/Exploration ); précédent : 000416; suivant : 000418Preferential site occupation of indium in β-Ga2O3
Auteurs : RBID : ISTEX:10751_1990_Article_BF02399871.pdfAbstract
The hyperfine interactions of111Cd in gallium oxide doped with111In have been studied as a function of temperature (300–1323 K) by means of the time differential perturbed angular correlation technique. The observed hyperfine interactions are assigned to the the β — form of gallium oxide. X-ray diffraction analysis support this conclusion. It is found that indium replace gallium at only one site of both possible sites in the monoclinic β — structure. This site is probably the sixfold corrdinated one. On the other hand, a time dependent interaction is detected at temperatures below 800 K.
DOI: 10.1007/BF02399871
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Pasquevich</name><affiliation wicri:level="1"><mods:affiliation>Departamento de Fisica, UNLP, c.c. 67, 1900, La Plata, Argentina</mods:affiliation><country xml:lang="fr">Argentine</country><wicri:regionArea>Departamento de Fisica, UNLP, c.c. 67, 1900, La Plata</wicri:regionArea><wicri:noRegion>La Plata</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="RBID">ISTEX:10751_1990_Article_BF02399871.pdf</idno><date when="1990">1990</date><idno type="doi">10.1007/BF02399871</idno><idno type="wicri:Area/Main/Corpus">000875</idno><idno type="wicri:Area/Main/Curation">000875</idno><idno type="wicri:Area/Main/Exploration">000417</idno></publicationStmt></fileDesc><profileDesc><textClass></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="eng">The hyperfine interactions of111Cd in gallium oxide doped with111In have been studied as a function of temperature (300–1323 K) by means of the time differential perturbed angular correlation technique. The observed hyperfine interactions are assigned to the the β — form of gallium oxide. X-ray diffraction analysis support this conclusion. It is found that indium replace gallium at only one site of both possible sites in the monoclinic β — structure. This site is probably the sixfold corrdinated one. On the other hand, a time dependent interaction is detected at temperatures below 800 K.</div></front></TEI><mods xsi:schemaLocation="http://www.loc.gov/mods/v3 file:///applis/istex/home/loadistex/home/etc/xsd/mods.xsd" version="3.4" istexId="98aa63e575b98ea0269768ebaf5ac010181e9418"><titleInfo lang="eng"><title>Preferential site occupation of indium in β-Ga2O3</title></titleInfo><name type="personal"><namePart type="given">A. F.</namePart><namePart type="family">Pasquevich</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Departamento de Fisica, UNLP, c.c. 67, 1900, La Plata, Argentina</affiliation></name><typeOfResource>text</typeOfResource><genre>Original Paper</genre><originInfo><publisher>Kluwer Academic Publishers, Dordrecht</publisher><dateValid encoding="w3cdtf">2006-04-08</dateValid><copyrightDate encoding="w3cdtf">1990</copyrightDate></originInfo><language><languageTerm type="code" authority="iso639-2b">eng</languageTerm></language><physicalDescription><internetMediaType>text/html</internetMediaType></physicalDescription><abstract lang="eng">The hyperfine interactions of111Cd in gallium oxide doped with111In have been studied as a function of temperature (300–1323 K) by means of the time differential perturbed angular correlation technique. The observed hyperfine interactions are assigned to the the β — form of gallium oxide. X-ray diffraction analysis support this conclusion. It is found that indium replace gallium at only one site of both possible sites in the monoclinic β — structure. This site is probably the sixfold corrdinated one. On the other hand, a time dependent interaction is detected at temperatures below 800 K.</abstract><relatedItem type="series"><titleInfo type="abbreviated"><title>Hyperfine Interact</title></titleInfo><titleInfo><title>Hyperfine Interactions</title><partNumber>Year: 1990</partNumber><partNumber>Volume: 60</partNumber><partNumber>Number: 1-4</partNumber></titleInfo><genre>Archive Journal</genre><originInfo><dateIssued encoding="w3cdtf">1990-08-01</dateIssued><copyrightDate encoding="w3cdtf">1990</copyrightDate></originInfo><subject usage="primary"><topic>Physics</topic><topic>Nuclear Physics, Heavy Ions, Hadrons</topic><topic>Atoms, Molecules, Clusters and Plasmas</topic><topic>Condensed Matter</topic><topic>Surfaces and Interfaces, Thin Films</topic></subject><identifier type="issn">0304-3843</identifier><identifier type="issn">Electronic: 1572-9540</identifier><identifier type="matrixNumber">10751</identifier><identifier type="local">IssueArticleCount: 95</identifier><recordInfo><recordOrigin>J.C. 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Baltzer A.G., Scientific Publishing Company, 1990</recordOrigin><recordIdentifier>10751_1990_Article_BF02399871.pdf</recordIdentifier></recordInfo></mods></record>Pour manipuler ce document sous Unix (Dilib)
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